Dr. Ru Xu| GaN Power and RF Electronic Materials and Devices| The Deputy Chair of the Department of Microelectronics at Nanjing University of Information Science and Technology , China
Dr. Xu Ru is an Associate Professor and Deputy Department Chair at the School of Integrated Circuit, Nanjing University of Information Science and Technology. A postdoctoral researcher at Nanjing University, Dr. Xu specializes in nitride semiconductor solid-state electronics, power electronics, lighting, and photodetector devices. He has made significant contributions to optimizing device structures and mechanisms in GaN Schottky diodes. His research has resulted in numerous groundbreaking publications in high-impact journals. Dr. Xu is also an active host and participant in multiple prestigious research projects, including national and provincial funding initiatives.
Professional Profile
Orcid
Education
Dr. Xu completed his Ph.D. in Electronic Science and Technology, focusing on Microelectronics and Solid-State Electronics at Nanjing University in 2021. Prior to that, he earned his Master’s degree in Electronic Science and Technology from Beijing University of Technology in 2016. His academic journey began with a Bachelor’s degree in Electronic Science and Technology from Nantong University in 2013. Throughout his academic career, he has been dedicated to understanding semiconductor technologies and has developed a strong foundation in microelectronics and optoelectronics, leading to numerous innovative research achievements.
Experience
Dr. Xu’s career includes multiple roles in academia and research. He is currently an Associate Professor and Deputy Chair at the School of Integrated Circuit, Nanjing University of Information Science and Technology. His research focuses on nitride semiconductors, power electronics, and optoelectronics, with particular emphasis on GaN Schottky diodes. Dr. Xu has contributed to several significant national and provincial projects, advancing the development of new semiconductor devices. Additionally, he has participated in key research funded by programs such as the National Key R&D Program and the National Natural Science Foundation. His expertise extends to optimizing device structures for improved performance in optoelectronic devices, and he has made key contributions to theoretical and applied electronics.
Research Interests
Dr. Xu’s research focuses on the development of nitride semiconductor solid-state electronics and power semiconductor devices, with a particular interest in optoelectronics and light-emitting devices based on semiconductor micro/nanostructures. His work has led to groundbreaking innovations in optimizing GaN Schottky diodes, both lateral and quasi-vertical structures. He is involved in device structure analysis, mechanism optimization, and the development of new materials for advanced electronic and optoelectronic applications. Dr. Xu’s contributions to nitride semiconductor lighting and photodetector devices are significant, as his work addresses critical issues in performance enhancement and device efficiency. His research also spans semiconductor device applications in various industries, including energy-efficient lighting, communications, and sensor technologies.
Awards
Dr. Xu has been recognized for his contributions to the field of electronics with several prestigious awards. He is currently hosting multiple provincial and national projects, including the Jiangsu Provincial Natural Science Foundation Youth Project and the China Postdoctoral Science Foundation 73rd Batch General Project. In addition, he has been honored with the Jiangsu Provincial Double Innovation Doctor Program and the Nanjing University of Information Science and Technology Talent Startup Fund. These accolades reflect his excellence in academic research and his role in advancing semiconductor technology. His work has also been featured in leading scientific journals, further solidifying his reputation in the field.
Publications
Research on RF performance of GaN HEMT with graded Al composition AlGaN back-barrier
A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure
1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination
Conclusion